InP-based heterojunction bipolar transistors: performance status and circuit applications

Abstract

The present status and prospects of heterojunction bipolar transistors configured with InP, InGaAs and/or InAlAs on InP substrates are reviewed. The importance of ultrahigh electron velocity is highlighted. Self-aligned fabrication techniques are described, and devices with wide bandgap collectors for microwave power applications and with low turn-on voltage for digital applications are presented. Applications are discussed. Frequency dividers configured with these devices have operated to 17 GHz.<<ETX>>

Topics

    0 Figures and Tables

      Download Full PDF Version (Non-Commercial Use)