InP-based heterojunction bipolar transistors: performance status and circuit applications


The present status and prospects of heterojunction bipolar transistors configured with InP, InGaAs and/or InAlAs on InP substrates are reviewed. The importance of ultrahigh electron velocity is highlighted. Self-aligned fabrication techniques are described, and devices with wide bandgap collectors for microwave power applications and with low turn-on voltage for digital applications are presented. Applications are discussed. Frequency dividers configured with these devices have operated to 17 GHz.<<ETX>>


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