In this paper, the ac electrical characteristics of metal oxide-based resistive random access memory are investigated based on a developed compact model and the experiment. The voltage-time dilemma phenomenon and the impacts of critical factors on resistive switching speed are addressed. Based on predictions of the model, the small parasitic capacitance, low target high resistance, and large thermal resistance are beneficial to accelerate the resistive switching speed both in SET and RESET processes. The high SET speed and low SET voltage can be achieved by tuning the activation energy of oxygen vacancies. While for the RESET process, the barriers of the release of oxygen ions from electrode and the hopping in resistive switching layer should be turned down simultaneously for high switching speed and low operation voltage.
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